Actuator at Low Frequencies
نویسنده
چکیده
A new model IS proposed for the low-frequency plezoelectnc acttvlty of ZnO films grown on CVD BO, In this MOS structure, wth ZnO as the sermconductor, a depletion layer is induced by means of a d c has voltage Usmg standard semiconductor theory, an expression 1s derived relating the electnc field m tis depletion layer mth the dnvmg a c and d c voltages Due to the built-m charge at the ZnO-StO, interface, a depletion layer exists, even when no d c bias 1s applied We measured the vibration amplitude at resonance of the tip of a slhcon cantdever, upon which the MOS structure was deposited, as function of a c and d c voltages The results show good agreement Hnth calculated curves Therefore, it can be concluded that thm-film ZnO can be used as a plezoelectnc actuator for nucromechamcal devices workmg at low frequencies
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